I shared an article last week or two weeks ago about visiting a Chinese memory semiconductor company.
The analyst's opinion was subjective, but he said it would take 2 years for China to start mass production of HBM.
Anyway, the word 'small amount' in yesterday and today's articles about the development news of Changxin Memory's HBM3E is a bit ambiguous.
It may not have reached the level where yield can be discussed, but I am curious to know how far it has come before discussing the yield.
Since Hynix developed HBM3E three years ago, the technological difference at that time seems to be about right. However, since they have followed without proper EUV, the gap may be closing faster.
Whether it's zHBM, zHBF, or HBM5, I hope that Korean companies will give us some peace of mind with their technology.
