NVIDIA Demand-Driven HBM4 Competition: SK hynix, Samsung, Micron's 12-Layer Mass Production and 16-Layer Advancement
NVIDIA Fuels HBM4 Race: 12-Layer Ramps, 16-Layer Push by SK hynix, Samsung, and Micron
- 2026.1.9 (TrendForce)
SK hynix: Leading with 12-layer 36GB and 16-layer 48GB HBM4 combined with MR-MUF process, even demonstrating 16-layer configurations, maintaining the current top position in both HBM4 technology and yield.
Samsung Electronics: Leveraging advanced 1c DRAM, 4nm logic, and hybrid bonding to secure high-performance Rubin-class HBM4 and expand HBM capacity by roughly 50% by 2026, targeting 16-layer HBM4E commercialization in 2028.
Micron: Achieving 11Gbps or higher speeds in 1-beta process HBM4, ramping high-yield production in Q2 2026, and pursuing Korean competitors through expanded production and packaging lines in Singapore and Hiroshima.
